| PART |
Description |
Maker |
| HYB39S512400AE-7.5 HYB39S512800AE-7.5 HYB39S512160 |
512-Mbit Synchronous DRAM
|
Qimonda AG
|
| IS42S32400B-6T IS42S32400B-7T IS42S32400B-6BL IS42 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| HYB39S128800FT-7 HYB39S128400FTL-7 HYB39S128400FT- |
128-MBit Synchronous DRAM 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| HYB39S64800AT-10 HYB39S64800AT-8 HYB39S64800AT-8B |
64 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
|
| Q67100-Q1844 Q67100-Q2800 HYB39S64160BT-7.5 HYB39S |
64-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB39S16400BT-10 HYB39S16800BT-10 HYB39S16400BT-8 |
16 MBit Synchronous DRAM
|
http://
Siemens Semiconductor Group
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| IS42S32400B-6TL IS42S32400B-6B IS42S32400B-6BL IS4 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
